一种SOInLDMOS的开态特性设计  

A design method of on-state characteristics for SOI nLDMOS

作　　者：温恒娟[1] 王猛[1] 周淼[2] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054 [2]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《电子元器件应用》2012年第11期39-42,共4页Electronic Component & Device Applications

摘　　要：介绍了一种用于高压电平位移电路的SOInLDMOS器件结构,对其漂移区、sink区、buffer区及场板等结构参数进行器件工艺联合仿真,并分析相关结构参数对开态特性的影响,用于指导高压MOS器件尤其是基于SOI的横向MOS器件的开态特性设计。采用优化的参数,器件关态击穿电压为296V,开态击穿电压为265V,比导通电阻为60.9mΩ.cm2。A kind of SOI nLDMOS for the application to high-voltage level shift circuits is introduced in this paper. Parameters about drift region,sink region,buffer region,and field plate of the SOI nLDMOS are simulated and analyzed the effect on the on-state characteristics,which has a certain guiding significance to the design of the on- state characteristics for high voltage MOS especially to the SOI LDMOS. The device has been optimized to obtain off- state breakdown voltage of 296 V, on-state breakdown voltage of 265 V,and specific on resistance 60.9 mΩ·cm^2 of have been realized by obtained the optimized parameters.

关 键 词：绝缘体上的硅SOI 高压器件 开态特性 比导通电阻 

分 类 号：TN386.1[电子电信—物理电子学]