GaAsP混晶中Te施主深能级的研究  

Study on Deep Donor Levels in Te-Doped GaAsP

作　　者：张文清[1] 黄启圣[1] 康俊勇[1] 

机构地区：[1]厦门大学物理系,厦门市361005

出　　处：《Journal of Semiconductors》1991年第1期1-5,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：用深能级瞬态谱(DLTS)方法研究了组分范围为x=0.11-0.95的掺Te的GaAs_(1-x)P_(?)混晶中的深能级.结果表明:样品中出现的深能级可分为A,B,C三类,其发射率激活能各约为:E_(?)~A=0.18ev,E_(?)~B=0.28eV,E_(?)~C=0.38eV.其中只有A能级在x=0.23-0.95间的所有样品中出现,B和C能级的出现不存在明显的规律性.进一步研究了A能级的性质后,认为它来源于Te替位杂质的DX中心,而B、C能级的性质可能比较复杂.Deep donor levels in Te-doped GaAs_(1-x)Px for the composition range of x=0.11-0.95have been studied by Deep level Transient Spectroscopy (DLTS). Three kinds of deep levelsA,B and C with emission activation energies of E_c^A=0.18eV, E_c^B=0.28eV, and E_c^C=0.38 eV were observed in these samples except for the sample with composition of x=0.11.Only level A appears in all samples. No any regularity for the presentation of B and C levelswas able to find. After further study on the emission and capture properties as well as theircomposition dependence for level A, it is considered that level A is originated from the DXcenter formed by substitutional Te impurities and the properties of B and C levels might be morecomplicated.

关 键 词：混晶 半导体 深能级 DX中心 能带 

分 类 号：O471.5[理学—半导体物理]