GaAs(001)衬底上分子束外延生长立方和六方GaN薄膜  

EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE

作　　者：刘洪飞[1] 陈弘[1] 李志强[1] 万里[1] 黄绮[1] 周均铭[1] 罗毅[2] 韩英军 

机构地区：[1]中国科学院物理研究所,北京100080 [2]清华大学电子工程系,北京100084

出　　处：《物理学报》2000年第6期1132-1135,共4页Acta Physica Sinica

摘　　要：采用分子束外延方法在GaAs(0 0 1)衬底上生长出了 0 3微米厚的GaN薄膜 ,X射线双晶衍射和室温光荧光测试结果表明 ,采用GaAs氮化表面作为成核层可获得高纯度立方GaN薄膜而采用AlAs氮化表面作为成核层可获得高纯度六方GaN薄膜 .GaN films of about 300?nm were grown on GaAs(001) substrates by molecular beam epitaxy (MBE).X\|ray double\|crystal diffraction and room\|temperature photoluminescence measurements show that the films grown on nitridized GaAs nucleation layer are pure cubic GaN while the films grown on nitridized AlAs nucleation layer are pure hexagonal GaN.The present study shows that the phase of GaN samples grown on GaAs substrates can be controlled using different nucleation layers

关 键 词：砷化镓 分子束外延生长 氮化镓薄膜 

分 类 号：O484.1[理学—固体物理]