基于离子注入与快速热退火的GeSn合金生长技术  

GeSn Alloy Growth Using Ion Implantation and Rapid Thermal Anneal

作　　者：周谦[1] 杨谟华[1] 王向展[1] 李竞春[1] 罗谦[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054

出　　处：《微电子学》2013年第1期125-129,共5页Microelectronics

摘　　要：针对源漏诱生应变Ge沟道p-MOSFET的发展趋势,开发了一种基于离子注入与快速热退火的GeSn合金生长新技术,并进行了二次离子质谱、X射线衍射、透射电子显微镜和方块电阻等测试。结果表明,采用快速热退火,可将单晶Ge衬底中的Sn原子激发至替位式位置,形成GeSn合金。当退火温度为400℃时,Sn原子激活率为100%,其峰值浓度固定为1×1021 cm-3,与Sn的初始注入剂量无关。该技术与现有CMOS工艺兼容,附加成本低,适用于单轴压应变Ge沟道MOSFET的大规模生产。A new technique for GeSn alloy growth was demonstrated.In this technique,high Sn dose ion implantation was used to incorporate Sn atoms in Ge substrate,and rapid thermal anneal（RTA） was employed for solid phase epitaxy of GeSn alloy.SIMS,XRD,TEM and four-point probe measurements were carried out to inspect material and electrical properties of the as-annealed sample.Experimental results showed that RTA could activate Sn atoms in single crystal Ge and form GeSn alloy.Sn activation rate reached 100% when RTA temperature was 400 ℃.The substitutional Sn concentration was fixed to 1×1021 cm-3 and it was not related to initial Sn dose.The new technique for GeSn growth,which was fully compatible with standard CMOS technology with minimal additional cost,is a prospective way for mass production of uniaxial strained Ge MOSFET with GeSn source/drain stressors.

关 键 词：锗锡合金 应变锗沟道 金属-氧化物-半导体场效应晶体管 离子注入 快速热退火 

分 类 号：TN304[电子电信—物理电子学]