氮化时间对RF-MBE法生长InN薄膜晶体结构的影响  

Influence of Nitridation Time on the RF-MBE Growth of InN Films Crystalline Structure

作　　者：高芳亮[1] 管云芳[1] 李国强[1] 

机构地区：[1]华南理工大学材料科学与工程学院,发光材料与器件国家重点实验室,广州510640

出　　处：《半导体光电》2013年第1期59-61,65,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(51002052);广东省战略新兴产业LED专项项目(211A081301012);华南理工大学基本科研业务费重点项目及其滚动项目(2009ZZ0017)

摘　　要：采用射频等离子体分子束外延(RF-MBE)技术在蓝宝石(Al2O3)衬底上外延生长了InN薄膜,在生长之前对其进行不同时间的氮化处理。通过扫描电子显微镜(SEM)和X射线衍射(XRD)对薄膜的形貌和结构进行了表征,发现氮化时间小于60min时获得的InN薄膜的晶体结构为多晶且表面粗糙,而氮化时间为60min及120min时获得的InN薄膜为单晶结构,表面粗糙度有所下降。分析表明,氮化时间对InN薄膜的晶体结构有很重要的影响。InN thin films with different nitridation time were grown by radio frequency plasma molecular beam epitaxy （RF-MBE） on sapphire （A12 O3） substrate. By means of SEM and X-ray diffraction scanning, InN thin films obtained by nitridation time of less than 60 min present polycrystalline structure and rough surface morphology, while InN thin films obtained by nitridation time of 60 and 120 min have single crystal structure and less rough surface morphology. It shows that the nitridation time plays an important role in the formation of the InN crystal structure.

关 键 词：氮化铟 氮化 RF-MBE 单晶薄膜 

分 类 号：O472[理学—半导体物理]