MOSFET开态热载流子效应可靠性  

HCI Reliability in MOSFET's under On State

作　　者：穆甫臣[1] 薛静[1] 许铭真[1] 谭长华[1] 

机构地区：[1]北京大学微电子所,北京100871

出　　处：《半导体杂志》2000年第4期51-59,共9页

摘　　要：综述了近年来MOSFET的热载流子效应和可靠性问题 ,总结了几种热载流子 ,并在此基础上详细讨论了热载流子注入 (HCI)引起的退化机制。对器件寿命预测模型进行了总结和讨论。The issues of hot carrier effects in MOSFET's are reviewed. Hot carriers are summarized. On this basis, the mechanisms of Hot Carrier Induced (HCI) degradation under on state stress modes are discussed. Lifetime prediction models are summarized and discussed.

关 键 词：可靠性 热载流子效应 场效应晶体管 MOSFET 

分 类 号：TN386.1[电子电信—物理电子学]