使用ECR苯等离子体沉积含氢非晶碳薄膜  

Deposition of a C:H Films Using ECR Benzene Plasma

作　　者：马春兰[1] 程珊华[1] 宁兆元 叶超 康健 辛煜 

机构地区：[1]苏州铁道师范学院物理系,苏州215000

出　　处：《微细加工技术》2000年第4期28-35,共8页Microfabrication Technology

基　　金：江苏省自然科学基金资助项目!(L310 870 3)

摘　　要：用苯作工作气体 ,在一个电子回旋共振 (ECR)微波等离子体化学气相沉积系统中制备了含氢非晶碳膜 (a -C :H) .对苯等离子体作了质谱分析 ,发现苯分解后形成的主要基团是C2 H4等 ,而不是常规甲烷放电的CH3,这将影响膜的结构。实验中还考察了沉积参数 ,如功率、气压、流量、基片温度对膜的沉积速率的影响。实验表明 :沉积速率随微波功率、气压和流量的增加而上升 ;随温度的升高先升后降 ,存在极值。对制备的膜作了氢含量和Raman谱分析 ,结果显示随着基片温度的增加 ,sp3结构在膜中所占的比例增大 ,膜更趋向于类金刚石膜。Hydrogenated amorphous carbon films (a C:H) were prepared in an electron cyclotron resonance plasma chemical vapor deposition system with benzene as a gas source. We analyzed the mass spectrum of the benzene plasma, and found the main contents of the decomposed benzene were C 2H 4 etc. instead of the common CH 3 from CH 4 discharge. It could affect the structure of the films. In the experiments, the effects of process parameters such as power、 pressure、flow rate of gas and substrate temperature on deposition rate were investigated. The results show that deposition rate increases with microwave power、 pressure of flow rate. However, deposition rate firstly increases and then decreases as substrate temperature increases. There exits a maximum value for deposition rate with substrate temperature. Hydrogen content and Raman spectrum of prepared films were analyzed. The results show when substrate temperature increased, sp 3 constitute increased and the film became more like to Diamond Like film

关 键 词：ECR-CVD 基片温度 非晶碳膜 苯等离子体 沉积 

分 类 号：TN304.055[电子电信—物理电子学] O484.1[理学—固体物理]