基片温度对含氢非晶碳膜电学特性的影响  

Effect of substrate temperature on electrical characteristic of α-C:H films

作　　者：马春兰[1] 程珊华[1] 宁兆元[1] 

机构地区：[1]苏州大学薄膜材料实验室,江苏苏州215006

出　　处：《苏州大学学报（自然科学版）》2000年第3期52-56,共5页Journal of Soochow University(Natural Science Edition)

基　　金：国家自然科学基金资助项目!(596 370 50 )

摘　　要：用电子回旋共振等离子体化学气相沉积 (ECR CVD)方法在不同基片温度下从苯制得了含氢非晶碳膜 (α C :H) ,对样品进行了伏安特性测试 考察了基片温度对电阻率与击穿场强的影响 ,并结合Raman谱探索α CElectron cyclotron resonance plasma chemical vapor deposition (ECR CVD) technique was used to prepare hydrogenated amorphous carbon films (α C:H) from benzene at different substrate temperature. Characteristics of voltage current of the samples were measured. The effects of substrate temperature on resistance and electrical field intensity were investigated. Raman spectrum was combined to explore the electric conduct mechanism of α C:H films.

关 键 词：非晶碳膜 基片温度 电学特性 

分 类 号：O484.42[理学—固体物理]