高AI组分Ⅲ族氮化物结构材料及其在深紫外LED应用的进展  

Development of high Al content structural Ⅲ nitrides and their applications in deep UV-LED

作　　者：陈航洋[1] 刘达艺[1] 李金钗[1] 林伟[1] 杨伟煌[1] 庄芹芹[1] 张彬彬[1] 杨闻操[1] 蔡端俊[1] 李书平[1] 康俊勇[1] 

机构地区：[1]厦门大学福建省半导体材料及应用重点实验室物理系,厦门361005

出　　处：《物理学进展》2013年第2期43-56,共14页Progress In Physics

基　　金："973"规划项目(2012CB619301;2011CB25600);"863"计划项目(2011AA03A111);国家自然科学基金项目(61227009;90921002);中央高校基本科研业务费专项资金资助项目(2012121014;CXB2011029);福建省自然科学基金计划项目(2012J01024)

摘　　要：随着高Ga组分Ⅲ族氮化物相关研究的日趋深入和生长技术的日益成熟,人们逐渐将研究重心转向具有更宽带隙的高Al组分Ⅲ族氮化物。该材料常温下带隙宽至6.2 eV,可覆盖短至210 nm的深紫外波长范围,具有耐高温、抗辐射、波长易调控等独特优点,因而是制备紫外发光器件的理想材料。目前,高Al组分Ⅲ族氮化物材料质量不高,所制备的深紫外LED发光器件仍存在内量子效率、载流子注入效率和沿c轴方向正面出光效率较低的难题,因而制约了高效紫外发光器件的制备。本文着重介绍了近年来在高Al组分Ⅲ族氮化物生长动力学方面的研究进展,总结和梳理了量子结构设计、内电场调控以及晶体场调控等方面的相关研究,以期实现高质量深紫外LED的制备。Along with the extensive investigations and growth technology maturation on high Ga content Ⅲ-nitrides, researchers have moved their focus onto high Al content Ⅲ-nitrides. Giyen a wider band gap up to 6.2 eV at room temperature, covering UV-light area as short as 210 nm, as well as other advantages of Ⅲ-nitrides, high AI content Ⅲ-nitrides are ideal materials for the fabrication of UV-light emitting devices. At present, there are certain challenges in the fabrication of UV-light emitting devices with high internal quantum ：efficiency, carrier injection efficiency and light-extraction efficiency due to the low quality materials. In this work, the progress on growth kinetics of high Al content Ⅲ-nitrides in recent years has been reviewed comprehensively, and the corresponding researches in quantum structure design, internal electric field modification and crystalline field modification have been overviewed and analyzed. This review is expected to be informative for the fabrication of deep UV-LEDs.

关 键 词：Ⅲ族氮化物 ALGAN ALN MOVPE 紫外LED 

分 类 号：TN312.8[电子电信—物理电子学] TN304