GaAs和AlGaAsMBE外延生长动力学研究  

STUDY OF THE GaAs, AlGaAs MBE GROWTH DYNAMICS 

作　　者：陈益栋[1,2] 刘兴权[1] 陆卫[1] 乔怡敏[1] 王贤仁[2] 

机构地区：[1]中国科学院上海技术物理研究所,红外物理国家实验室,上海200083 [2]吉林大学电子工程系,吉林长春130023

出　　处：《红外与毫米波学报》2000年第1期67-70,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金!(编号 697760 1 8);国家杰出青年基金!(编号1 952 540 9)

摘　　要：研究了在GaAs(001)衬底上外延生长GaAs、AlGaAs材料过程中反射高能电子衍射(RHEED)的各级条纹及其强度随生长过程的变化.通过对各级条纹强度振荡周期和位相的分析,应用二维成核层状生长模型解释了实验结果:生长表面形貌的周期性变化导致了RHEED各级条纹及其强度的周期性变化.The intensity oscillations in the various beams in RHEED pattern were observed during MBE growth of GaAs and AlGaAs. The two dimensional layer by layer mode was used to analyze the experiment results and (00)、(01) beams intensity oscillations were attributed to the periodic variations of the surface roughness. The existence of the various fractional order beams indicated that the reconstructed surface existed on the GaAs (001) substrate surface during growth in the present growing conditions, their intensity oscillations were attributed to the reconstruction periodic variations on the two dimensional island surface.

关 键 词：分子束外延 砷化镓 半导体 ALGAAS 

分 类 号：TN304.23[电子电信—物理电子学]