HVPE反应器的环形分隔进口数对生长均匀性的影响  

Effect of Segmented Annular Inlets Number of HVPE Reactor on The GaN Growth Uniformity

作　　者：赖晓慧[1] 左然[1] 师珺草[1] 刘鹏[2] 童玉珍[2] 张国义[2] 

机构地区：[1]江苏大学能源与动力工程学院,江苏镇江212013 [2]北京大学物理学院宽禁带半导体研究中心,北京100871

出　　处：《发光学报》2013年第6期797-802,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61176009);国家重点基础研究发展计划(2011CB013101)资助项目

摘　　要：利用FLUENT软件对3种环形分隔进口(4环、8环、12环)的氢化物气相外延(HVPE)反应器的生长均匀性进行了二维数值模拟研究。分别考虑输运模型和输运-生长模型,模拟过程保持相同的GaCl、NH3及N2气体进口流量。结果显示:在只考虑输运的模型中,反应室流动均匀性随着进口环数的增多而改善。8环进口时,衬底上方温度分布最均匀;4环进口时,衬底上方的GaCl浓度较高,但均匀性最差,Ⅴ/Ⅲ比也较低;8环及12环进口可得到均匀的GaCl浓度分布及较高的Ⅴ/Ⅲ比。在包括输运和GaN生长的模型中,尽管8环进口反应器衬底上方的GaCl浓度低于12环进口反应器,却因其较薄的边界层厚度而导致较高的生长速率,并且生长均匀性较高。因此,8环进口反应室更有利于GaN的HVPE生长。Two-dimensional numerical simulation was performed by FLUENT for the HVPE reactor with different segmented annular inlets, considering the transport model and transport-growth model, with the flow rates of GaC1, NH3 and N2 kept constant. When only considering the gas transport, the results show that the flow uniformity is improved by increasing the number of annular inlets and the 8 annular inlets reactor can give the most uniform temperature distribution on the substrate. The GaC1 concentration on the substrate of 4 annular inlets is high, but the uniformity is poor, and the V/Ⅲ ratio is also low. The 8 and 12 annular inlets can give uniform GaC1 concentration distribution on the substrate, and high V/Ⅲ ratio. When the GaN growth rate is also considered, the results show that the growth rate for 8 inlets is higher than that of the 12 inlets because of the thinner boundary layer of the GaCl concentration, although the GaCl concentration for 8 annular inlets is lower than that of the 12 annular inlets on the substrate. Thus, the 8 annular inlets is more advantageous to the GaN HVPE growth.

关 键 词：HVPE GAN 环形进口 反应器设计 数值模拟 

分 类 号：O47[理学—半导体物理]