GaAs∶SiCu光导开关的计算机模拟  

Computer Simulation of GaAs∶Si∶Cu Photoconductive Semiconductor Switches

作　　者：于海霞[1] 杨瑞霞[1] 付浚[1] 

机构地区：[1]河北工业大学电气信息学院,天津300130

出　　处：《河北工业大学学报》2000年第3期40-44,共5页Journal of Hebei University of Technology

基　　金：河北省自然科学基金!597043;中国科学院半导体材料科学研究室资助

摘　　要：对掺Si补偿Cu的GaAs（GaAs∶Si∶Cu）材料的光控开关特性进行了计算机模拟，结果表明Cu与Si的浓度比（NCu/NSi）和激光通量是影响开关特性的两个重要因素，NCu／NSi越大，电导淬灭时间越短；光通量越大，导通态电导率越大，开关闭合、断开时间越短．并分析了上述现象的产生机理．Simulation studies are performed on the properties of photoconductive semiconductor switches of Cu compensated Si doped GaAs (GaAs∶Si∶Cu). The computed results demonstrate that the density ratio (NCu/NSi) and the laser photon flux are two important parameters influencing the switches. The larger the NCu/NSi, the shorter the photoconductive quenching time, the larger the photon flux, the larger the on-state conductivity and the shorter the turn-on and turn-off time. In addition, the mechanisms of the above phenomena are analyzed.

关 键 词：光导开关 砷化镓 铜 计算机模拟 硅 半导体 

分 类 号：O472.8[理学—半导体物理] TN304.23[理学—物理]