蓝宝石基GaN薄膜的热应力模拟分析  

Simulation of Stresses in GaN Thin Film on Sapphire

作　　者：董位[1] 左然[1] 赖晓慧[1] 师珺草[1] 

机构地区：[1]江苏大学能源与动力工程学院,江苏镇江212013

出　　处：《激光与光电子学进展》2013年第7期174-178,共5页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(61176009)

摘　　要：利用有限元分析软件ANSYS对蓝宝石基GaN薄膜的应力进行了模拟分析,并通过理论计算验证了其合理性。模拟出了蓝宝石基GaN薄膜应力的分布情况。分析了应力与沉积温度、薄膜厚度、衬底厚度的关系,同时研究了不均匀温度分布对应力的影响。模拟结果显示:薄膜上表面在径向上,中心处热应力最大,薄膜边缘应力发生了突降,其他部分应力分布比较均匀。研究表明沉积温度升高、薄膜厚度减小以及衬底厚度增大都会使热应力变大。衬底径向温度不均匀时,热应力有增大的趋势,且温差越大,热应力就越大。Finite element analysis software ANSYS is used to calculate the stresses in GaN film on sapphire,and the results was proved to be reasonable by theoretical calculation. The stress distribution of GaN film on sapphire is simulated. The dependence of stress on deposition temperature, film thickness and substrate thickness is analyzed. The effect of non-uniform temperature distribution on stresses is also discussed. The results show that a largest thermal stresses appears in the center, a sharp reducing of stress occurs at the film edge and the rest parts are relatively uniform. When the deposition temperature increases, the film thickness reduce or the substrate thickness increases ,thermal stresses will increase. When the radial direction temperature has a non-uniform distribution in the sapphire substrate, the film stress will increase, and the larger difference of temperature is, the larger thermal stress in the film will be.

关 键 词：薄膜 GAN薄膜 热应力 沉积温度 数值模拟 

分 类 号：TB43[一般工业技术]