闭环控制靶电压直流磁控反应溅射沉积AlN薄膜  

DEPOSITION OF AlN FILMS BY DC REACTIVE MAGNETRON SPUTTERING WITH CLOSED-LOOP CONTROLLING TARGET VOLTAGE

作　　者：池华敬[1] 郭帅[1] 熊凯[1] 王双[1] 陈革[1] 章其初[1] 

机构地区：[1]皇明太阳能股份有限公司镀膜研发中心,德州253000

出　　处：《太阳能学报》2013年第7期1136-1140,共5页Acta Energiae Solaris Sinica

摘　　要：在原磁控溅射三靶镀膜机上安装了UPS03反应溅射闭环控制单元,替代原有的级差法控制流量计改变反应气体流量的方法,实现反应溅射AlN反馈控制。该控制单元由UPC03型控制器和PCV03型压电陶瓷阀组成。控制器实时采集直流电源的Al靶电压信号,与设定电压进行比较计算处理,输出电压控制信号至压电陶瓷阀,调节输出N2流量,实现Al靶电压稳定控制。在靶表面处于过渡态下,成功制备了吸收几乎为零的AlN薄膜。溅射功率14kW,反应溅射沉积AlN的靶电压波动可长时间稳定控制在±2V范围内,沉积速率高达4.5nm/(min·kW),约为Al靶在无反应气体溅射下沉积Al薄膜速率的80%。溅射沉积的AlN薄膜作为减反射层应用到SS-AlN太阳选择性吸收涂层中,使得太阳吸收比高达0.956。Abstract： A reactively sputtering close-loop control unit named UPS03 was mstalleu on magnetron sputtering coater with three magnetron sources, replacing graded controlling method which adjusting reactive gas output of gas flowmeter, and has been successfully operated for reactively sputtering AlN films. The control unit is consists of UPC03 controller and PCV03 Piezo-electrically valve. The input of the controller is connected to the analogue output of the DC power supply. The Piezo-electrically valve is connected to the output of the controller as an actuator. The controller compares the Al target voltage signal to the selected setpoint on the controller, adjusting the N2 gas flow rate, actualizing stabilization of Al target voltage. The AlN films nearly zero absorption has been successfully deposited at the transition state of the AI target surface. The fluctuation of AI target reactive magnetron sputtering voltage can be long-term stability within ＋ 2V, with a sputtering power 14kW. The deposition rate of AIN films as high as 4.5nm/（min＇kW） was obtained, which is 80% of deposition rate of Al films without reactive gas. The reactively sputtered A1N film has been successfully applied on the SS-AlN cermet solar absorbing coatings as an antireflection layer, which made the solar absorptance high as 0. 956.

关 键 词：反应溅射 迟滞曲线 闭环控制 ALN薄膜 SS-AlN金属陶瓷太阳吸收涂层 

分 类 号：TB7[一般工业技术—真空技术]