DC～20GHz GaAs PHEMT超宽带低噪声放大器  

DC-20 GHz GaAs PHEMT Ultra-Broadband Low Noise Amplifier

作　　者：朱思成[1] 田国平[2] 白元亮[1] 张晓鹏[1] 陈兴[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2013年第8期571-575,共5页Semiconductor Technology

摘　　要：采用0.15μm GaAs PHEMT工艺,设计了一款DC～20 GHz宽带低噪声放大器,可作为驱动放大器用于光纤通信或作为宽带增益模块用于测试及测量系统中。电路采用分布式放大器结构,单节采用共源共栅的结构形式实现,其与共源结构相比,拥有较低的栅-漏反馈电容和较高的输出并联电阻,使电路具有较宽的频带、较高的增益和较高的线性度等特点。电路采用+8 V电源供电,将芯片及外围器件进行模块化封装后,易于测试和使用。经过实测,带内的典型噪声系数为3 dB,小信号增益达到14 dB,输入回波损耗低于-14 dB,输出回波损耗低于-17 dB,1 dB增益压缩输出功率达到16 dBm。芯片尺寸为3.12 mm×1.574 mm。The broadband low noise amplifier in the frequency of DC -20 GHz was designed based on the 0. 15 μm GaAs PHEMT process. It is ideal for using as a driver amplifier for fiber optical communication systems, or a broadband gain block for test and measurement equipment systems. The monolithic amplifier was designed with a distributed amplifier topology. The cascode structure was adopted by each of sections. The cascode cell has a lower gate-drain feedback capacitance and a higher output shunt resistance than the common-source configuration. The circuit of the cascode cell has wider broadband, higher gain and higher linearity. The supply voltage is ＋8 V. The amplifier was easy for testing and using after the broadband amplifier chip and external devices were modularized. Measurement results show that the designed amplifier has a typical noise figure of 3 dB, a small signal gain of lg dB, an input return loss of less than - lg dB, an output return loss of less than - 17 dB, and output power at 1 dB gain compression of 16 dBm. The chip size is 3. 12 mm - 1. 574 mm.

关 键 词：赝配高电子迁移率晶体管(PHEMT) 低噪声放大器 分布式放大器 共源共栅 噪声系数 

分 类 号：TN304.23[电子电信—物理电子学] TN722.3