AlN压电薄膜的制备工艺  

Fabrication Technology of AlN Piezoelectric Thin Films

作　　者：陈颖慧[1] 王旭光[1] 席仕伟[1] 施志贵[1] 姚明秋[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621999

出　　处：《微纳电子技术》2013年第8期506-511,共6页Micronanoelectronic Technology

基　　金：中国工程物理研究院科技发展基金重点课题资助项目(2010A0302013);中国工程物理研究院超精密加工技术重点实验室课题资助项目(2012CJMZZ00003;2012CJMZZ00006)

摘　　要：采用射频反应磁控溅射法制备了AlN压电薄膜,并分析了制备条件对AlN薄膜性能的影响。为了确定c轴择优取向生长AlN薄膜的制备工艺参数,设计了关于溅射功率、衬底温度、氮氩体积比和气氛压强这四个参数的工艺实验,研究了不同的工艺条件对AlN薄膜质量的影响。采用X射线衍射(XRD)图谱分析了薄膜的晶格结构和摇摆曲线半高宽,采用原子力显微镜(AFM)表征了薄膜的表面形貌和均方根粗糙度。对不同制备条件下AlN薄膜样品的XRD和AFM测试结果进行了分析和讨论,最终得到了最佳的工艺参数,为下一步研究工作提供了实验依据和奠定了工艺基础。The AlN piezoelectric thin films were fabricated by RF reactive magnetron sputtering method, and the effect of preparation conditions on the properties of AlN thin films were ana- lyzed. In order to make sure the deposition parameters of the c-axis orientation AlN film, the process experiments were designed about the four parameters of the sputtering power, substrate temperature, volume ratio of N2 and Ar, and gas pressure. The effects of different process conditions on the quality of the AlN thin films were investigated. The crystal structure and full width at half maximum （FWHM） of the thin film were analyzed by X-ray diffraction （XRD）. The surface morphology and roughness （RMS） of the thin film were characterized by atomic force microscopy （AFM）. The XRD and AFM test results of the AlN thin films under different preparation conditions were analyzed and discussed. At last, the optimal process parameters were obtained. The results provide the experiment evidence and process base for the next study.

关 键 词：ALN薄膜 射频反应磁控溅射 c轴择优取向 X射线衍射(XRD) 原子力显微镜(AFM) 

分 类 号：TN304.24[电子电信—物理电子学]