一款应用于LTE移动终端的射频功率放大器设计  

Design of RF Power Amplifier Applied in LTE Mobile Handsets

作　　者：王虹[1] 周仁杰[1] 刘洪刚[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《科学技术与工程》2013年第20期5801-5805,共5页Science Technology and Engineering

基　　金：国家自然科学基金;国家"863"计划项目资助

摘　　要：基于WIN InGaP/GaAsHBT工艺,设计了一款应用于LTE移动终端的射频功率放大器。工作在AB类偏置状态,由三级放大电路级联构成,并带有温度补偿和线性化的偏置电路。芯片版图面积为1410×785μm2,电源电压为3.4V。仿真结果显示:功率增益大于30.1dB、1dB压缩点输出功率为31.2dB.m,在Band38(2570～2620)MHz内,输入回波损耗S11小于-15dB,S21大于30.1dB,输出回波损耗S22低于-25dB,1dB压缩点输出功率的功率附加效率高达36.6%。A RF power amplifier （PA） is designed applied in LTE mobile handsets based on WIN InGaP/GaAs technology. The PA consists of three stage amplifiers biased in class AB with temperature compensation and linearized bias circuit. The area of layout is , and the supply voltage is 3.4 V. Simulation results show that the power amplifier has a power gain over 30.1 dB, an output 1 dB compression point （output P1dB） of 31.2 dBm. In band 38（2570~2620MHz）, S11 is lower than -15dB, the S21 is higher than 30.1 dB, S22 is lower than -25dB, and the efficiency at the 1dB compression point is 36.6%.

关 键 词：LTE INGAP GaAs HBT 射频功率放大器 1dB压缩点 功率增益 功率附加效率 

分 类 号：TN722.11[电子电信—电路与系统]