CFD模拟RPCVD的正交法优化设计与分析  

Orthogonal optimal design and analysis of RPCVD simulation by CFD

作　　者：戴显英[1] 郭静静[1] 邵晨峰[1] 郑若川[1] 郝跃[1] 

机构地区：[1]西安电子科技大学宽带隙半导体国家重点实验室,陕西西安710071

出　　处：《西安电子科技大学学报》2013年第4期72-78,共7页Journal of Xidian University

基　　金：国家重点基础研究(973)资助项目(6139801-1)

摘　　要：采用正交法对减压化学气相淀积生长SiGe材料的多因素、多水平计算流体动力学模拟进行优化设计.采用FLUENT软件,对正交优化设计的试验进行了密度、速度及压强分布的模拟.对生长表面9点位置处的模拟结果进行了极差和方差分析,得到了最终的模拟优化工艺参数.正交法设计的模拟优化参数与实际工艺实验参数相一致,低温生长应变SiGe的优化模拟参数为流量1.67×10-4 m3/s,基座温度823K,反应室压强2 666.44Pa;高温生长弛豫SiGe的优化模拟参数为流量1.67×10-4 m3/s,基座温度1 123K,反应室压强7 999.32Pa.The simulation of multi-level and multi-factor for the growth of SiGe matetial by RPCVD is designed by adopting the orthogonal method. A FLUENT simulation of density, velocity and pressure distributions for the above designs is given by using CFD software. According to the range and variance analysis of the growth surface simulation results in nine positions, the final optimized simulation parameters are obtained. The optimization results by using the Orthogonal Method that the flux of the inlet is 1.67×10^-4m^3/s, the pressure of the chamber is 2 666. 44 Pa at low tempreture（823K） and that the flux keeps 1.67×10^-4m^3/s, and the pressure is 7 999. 32 Pa at high tempreture （1 123 K） are consistent with those by practical technology.

关 键 词：正交法 计算流体动力学 减压化学气相淀积 锗硅 

分 类 号：TN304[电子电信—物理电子学] O351.2[理学—流体力学]