非晶硅薄膜的制备及晶化研究  

Study on the Preparation and Crystallization of Amorphous Silicon Film

作　　者：段良飞[1,2] 张力元[1,2] 杨培志[1,2] 化麒麟[1,2] 邓双[1,2] 廖华[1,2] 

机构地区：[1]可再生能源材料先进技术与制备教育部重点实验室,云南昆明650092 [2]云南师范大学太阳能研究所,云南昆明650092

出　　处：《云南师范大学学报（自然科学版）》2013年第2期16-19,共4页Journal of Yunnan Normal University:Natural Sciences Edition

基　　金：国家自然科学基金联合基金资助项目(U1037604)

摘　　要：采用磁控溅射技术首先在玻璃基片、单晶硅片上溅射非晶硅薄膜再在其表面溅射铝膜,并用快速退火炉在不同温度下进行退火。利用台阶仪、拉曼散射光谱(Raman)仪和X射线衍射(XRD)仪对薄膜进行性能表征。结果表明:在功率120W,气压1.5～2.5pa,时间为3.5～4.5h的条件下可制备得非晶硅薄膜,Al诱导能降低晶化温度,并在500～600℃间存在一最佳晶化温度。Morphous silicon thin films and luminum thin films were deposited on glass substrate and monocrystalline silicon substrate by magnetron sputtering.The thin films were characterized by Profile-system,Raman scattering spectroscopy（Raman）and X-ray diffraction（XRD）.Results show amorphous silicon thin film can be well prepared by magnetron sputtering at 120w,1.5~2.5pa Ar pressure for 3.5~4.5h.Al induction can reduce crystallization temperature.Preliminary research shows that an optimal crystallization temperature is existing in the temperature range of 500-600℃,with aluminum induction.

关 键 词：非晶硅薄膜 磁控溅射 铝诱导晶化 多晶硅 

分 类 号：O484.1[理学—固体物理]