深亚微米MOS晶体管总剂量效应模型研究  

Modeling of Total Ionizing Dose Effect in Submicron MOS Transistor

作　　者：李斌[1] 许跃彬[1] 潘元真[1] 

机构地区：[1]华南理工大学电子与信息学院,广州510640

出　　处：《核电子学与探测技术》2013年第6期735-738,774,共5页Nuclear Electronics & Detection Technology

基　　金：国家自然科学基金资助项目(60776020);国际合作项目(Cadence公司资助)

摘　　要：总剂量辐照效应会在器件氧化层中引入固定电荷和界面态。对于深亚微米CMOS器件而言,栅氧化层非常薄,固定电荷和界面态的变化不明显,而STI(Shallow Trench Isolation)场氧隔离区中电荷变化却相对明显,构成了器件静态泄漏电流产生的主要原因。针对此现象,通过引入表面势分量φrad,描述了总剂量辐照效应下STI场氧隔离区固定电荷和界面态变化特性,对STI场氧隔离区引入的寄生晶体管进行建模,修正了漏电流方程,新的模型可以较准确地描述深亚微米CMOS器件在总剂量辐照应力下的退化特性。As the gate oxide of deep submicron CMOS device is ultra thin, oxide traps and interface traps could be ignored under the stress of total ionizing dose. However, these two carries in shallow trench isolation （STI） region become more and more important in the leakage current of the device. In the paper, a potential component φrad is introduced to describe these two carries in surface potential function and along with the drain function to describe the degradation of CMOS device.

关 键 词：总剂量效应 浅沟道隔离 泄漏电流 退化 

分 类 号：TN386[电子电信—物理电子学]