不同源漏掺杂方式对CCD放大器的影响  

Influences of Different Source-Drain Doping Methods on Performance of CCD amplifier

作　　者：王晓强[1] 林海青[1] 许青[1] 韩恒利[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2013年第4期603-606,共4页Semiconductor Optoelectronics

摘　　要：通过对CCD片上放大器不同源漏掺杂条件、方块电阻、接触电阻、有效沟道长度的分析研究,确定了源漏工艺条件为磷离子注入能量100keV、剂量5×1015 cm-2。分析了扩散、离子注入源漏掺杂对放大器直流输出的影响,结果表明,当宽长比为4/1时,注入源漏掺杂制作的放大器直流输出与仿真值差异为0.28V,优于扩散工艺。Abstract. Based on analyzing different source-drain doping methods for charge coupled- devices （CCD） amplifier, the effects of sheet resistance, contact resistance and effective channel length were researched, and the process conditions are determined as phosphorous ion implantation of 100 keV with a dose of 5 × 10^15 cm2. The influences of diffusion and ion implantation on the DC output of CCD amplifier were analyzed, and the results show that the difference between the DC output and the simulation value is 0. 28 V when W/L ratio is 4/1, much better than the re.nit nhtMn,~l I.,, tl,~ A;~~,,~;

关 键 词：放大器 离子注入 沟道长度 直流输出 

分 类 号：TN386.5[电子电信—物理电子学]