改善高压FRD结终端电流丝化的新结构  

New Structure to Alleviate Current Filamentation at the Edge Termination of High-Voltage FRDs during Dynamic Avalanche

作　　者：吴立成[1] 吴郁[1] 魏峰[1] 贾云鹏[1] 胡冬青[1] 金锐 査祎影 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124 [2]国网智能院电工新材料及微电子研究所,北京100192

出　　处：《电子科技》2013年第10期98-100,104,共4页Electronic Science and Technology

基　　金：国家自然科学资金资助项目(61176071);国家电网公司科技基金资助项目(SGRI-WD-71-13-006);教育部博士点基金新教师基金资助项目(2011110312001)

摘　　要：动态雪崩问题是影响高压硅功率二极管如高压快恢复二极管(FRD)坚固性的一个主要因素。文中通过仿真计算,比较了高压FRD两种不同终端结构的动态雪崩特性。结果表明,横向变掺杂2(VLD)终端结构的动态雪崩耐量比结终端延伸(JTE)结构更优。为改善后者动态雪崩过程中结终端处的电流丝化问题,文中提出改用P+/P阳极结构中的P型缓冲层做介于有源区与终端区之间的电阻区。仿真结果表明,相应的电流丝化问题可得到显著缓解。Dynamic avalanche is a major factor which affects the ruggedness of high-voltage silicon power bipolar devices, e. g. the high-voltage fast recovery diode （FRD）. In this paper, a simulation to compare the dynamic avalanche characteristics of two high-vohage FRDs with different edge terminations is presented. Simulation results show that a high-voltage FRD with VLD （ variation of lateral doping） structure has better dynamic avalanche immunity than that with JTE （junction termination extension）. A new structure for the FRD with JTE to alleviate the current filament at the edge termination during dynamic avalanche is proposed and its effectiveness is simulated and demonstrated. In this structure the resistance area is created by the P buffer area of the P ＋/P anode. Simulation results show that the current filament can be well alleviated.

关 键 词：快恢复二极管 动态雪崩 电流丝 终端结构 

分 类 号：TN312.4[电子电信—物理电子学]