硅化钛场板的工艺条件与特性研究  

A Study on Process Conditions and Properties of TiSi Field Plate

作　　者：许帅[1] 徐政[1] 吴晓鸫[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《电子与封装》2013年第10期33-35,共3页Electronics & Packaging

摘　　要：场板的制备工艺与特性研究对提高RF LDMOS大功率器件的可靠性与耐高压性有重要意义。文中制备了一种"Si衬底-SiO2-多晶-硅化钛-金属"结构的场板,分析了其工艺条件对特性的影响,并优化其工艺条件。实验表明:PESiO2加200 nm的多晶介质层具有较好的BT CV稳定性,多晶注入后退火温度与硅化钛退火温度的提高不利于场板电阻与平带电压的稳定性。优化后的工艺条件下,该场板结构具有较好的可靠性与耐高压性。The study of process and property of filed plate on the reliability and high voltage resistance of high power RF LDMOS device is significant. In this paper, a field plate with the structure of＂Si -SiO2-POLY- TiSi-Metal＂ was fabricated, the effects of process conditions on properties of field plate were analyzed, and the process conditions were optimized. The experiment results show that, dielectric of PESIO2 with 200 nm poly have better BT CV stability, the raising of annealing temperature after poly implantation and TiSi can weaken the stability of resistance and fiat belt voltage. The field plate fabricated in the optimized process conditions has excellent reliability and high voltage resistance.

关 键 词：硅化钛 场板 CV特性 稳定性 

分 类 号：TN305.6[电子电信—物理电子学]