调制掺杂Al_(x)Ga_(1-x)NGaN异质结磁输运研究(英文)  

Magnetotransport investigation of modulation-doped Al_(x) Ga_(1-x)N/GaN heterostructures

作　　者：郑泽伟[1] 沈波[1] 张荣[1] 桂永胜[2] 蒋春萍[2] 马智训[2] 郑国珍[2] 郭少令[2] 施毅[1] 韩平[1] 郑有炓[1] 

机构地区：[1]南京大学物理系,南京 210093 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083

出　　处：《功能材料与器件学报》2000年第4期381-384,共4页Journal of Functional Materials and Devices

基　　金：NationalNaturalScienceFoundationofChina(No .69806006;69976014;69636010and 69987001) ;the National High Technology Research & Development Project of China ( No.863-715-001-0030)

摘　　要：通过低温和高磁场下的磁输运测量 ,首次在Al0 .2 2 Ga0 .78N GaN异质结中观察到了舒勃尼科夫 德哈斯振荡的双周期特性 ,发现在Al0 .2 2 Ga0 .78N GaN异质结的三角势阱中产生了二维电子气 (2DEG)的第二子带占据 ,发生第二子带占据的阈值 2DEG浓度估算为 7.2× 1 0 12 cm- 2 ,在阈值 2DEG浓度下第一子带和第二子带能级的距离计算为 75meV。Magnetoresistance of modulation doped Al 0.22 Ga 0.78 N/GaN heterostructures has been studied by means of magnetotransport measurements at low temperatures and high magnetic fields. The double periodicity of the Shubnikov de Hass oscillations was observed. It was found that the occupation of the first two subbands by the two dimensional electron gas(2DEG) in the triangular quantum well at the Al 0.22 Ga 0.78 N/GaN heterointerface took place when the 2DEG sheet concentration reached 7.2×10 12 cm 2 . The energy separation of the first and the second subbands in the quantum well was determined to be 75 meV just before the second subband was occupied.

关 键 词：异质结 第二子带占据 氮化镓 磁输运 二维电子气 

分 类 号：TN304.23[电子电信—物理电子学] O484.3[理学—固体物理]