InSb薄膜分子束外延技术研究  

Research of InSb film growth by molecular beam epitaxy

作　　者：刘铭[1] 程鹏[1] 肖钰[1] 折伟林[1] 尚林涛[1] 巩锋[1] 周立庆[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2013年第11期1256-1259,共4页Laser & Infrared

摘　　要：InSb材料由于其优异的光电性能,一直是军事领域重要的红外探测器材料。而高温工作是InSb发展的一个重要方向,开发分子束外延InSb材料是实现高温工作的基础。本文采用分子束外延工艺生长获得了高质量的InSb薄膜,通过金相显微镜、X射线双晶衍射仪、原子力显微镜、SEM和EDX等检测手段对InSb外延膜进行表面缺陷、晶体质量表征和分析,并采用标准的InSb器件工艺制备128×128焦平面探测器芯片进行材料的验证,结果表明该材料性能可以满足制备高性能器件的要求。For the excellent optical and electrical properties of InSb, the InSb material is one of the most important in-frared detector materials in the field of military. High operating temperature （HOT） FPAs is an important direction for Infrared detector development, and the development of molecular beam epitaxy InSb material can achieve high-tem- perature work. High-quality InSb thin film growth by molecular beam cpitaxy is presented, and the InSb epitaxial film＇ s crystal quality characterization and surface defects are analyzed by using optical microscopy, double-crystal X-ray diffraction,atomic force microscopy,SEM and EDX. Standard 128 × 128 arrays InSb chip is fabricated from this material, and all the results indicate the properties have reached the requirements of high-performance devices.

关 键 词：InSb外延膜 分子束外延 晶体质量 128×128 

分 类 号：TN213[电子电信—物理电子学]