TSV Cu CMP碱性抛光液及工艺  

Alkaline Slurry and the Process for TSV Cu CMP

作　　者：蔡婷[1] 刘玉岭[1] 王辰伟[1] 牛新环[1] 陈蕊[1] 高娇娇[1] 

机构地区：[1]河北工业大学微电子技术研究所,天津300130

出　　处：《微纳电子技术》2013年第11期735-738,742,共5页Micronanoelectronic Technology

基　　金：国家中长期发展规划重大科技专项资助项目(2009ZX02308)

摘　　要：穿透硅通孔(through silicon via,TSV)技术采用铜作为互连材料,晶圆表面沉积了一层厚厚的铜膜,对铜去除速率提出了新要求。从化学机械平坦化(CMP)过程的机理出发,对影响铜去除速率的因素,如磨料、活性剂、氧化剂、螯合剂以及抛光工艺中抛头转速、转盘转速、抛光液流量、工作压力进行了单因素实验和规律分析。通过单因素实验得出,在磨料、活性剂、氧化剂和螯合剂的体积分数分别为50%,1.5%,0.5%和5%,抛头转速和转盘转速分别为105和100 r/min、抛光液流量为225 mL/min和工作压力为4 psi(1 psi=6 895 Pa)时,铜去除速率高达1.5μm/min。The copper was served as the interconnect material in the through-silicon-via （TSV） technology, and a thick layer of the copper was deposited on the wafer surface. The new require- ments were proposed for the copper removal rate. Based on the mechanism of the CMP process, the single factor experiments and regularity analysis for the main factors to influence the copper removal rate were carried out, including the abrasive, surfactant, oxidant, chelating agent, head speed, plate speed, slurry flow rate and working pressure. The single factor experiments show that the copper removal rate reaches 1.5 μm/min when the volume fractions of abrasive, surfac- tant, oxidant and chelating agent are 50%, 1.5%, 0. 5% and 5%, respectively, the head speed is 105 r/min, the plate speed is 100 r/min, the slurry flow rate is 225 mL/min and the working pressure is4 psi （1 psi =6895 Pa）.

关 键 词：穿透硅通孔(TSV) 化学机械平坦化(CMP) 单因素 高去除速率 抛光液 

分 类 号：TN305.2[电子电信—物理电子学]