应变Si NMOSFET漏电流解析模型  

Analytical modeling for drain current of strained Si NMOSFET

作　　者：周春宇[1] 张鹤鸣[1] 胡辉勇[1] 庄奕琪[1] 吕懿[1] 王斌[1] 李妤晨[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071

出　　处：《物理学报》2013年第23期300-307,共8页Acta Physica Sinica

基　　金：教育部博士点基金(批准号:JY0300122503);中央高校基本业务费(批准号:K5051225014;K5051225004);陕西省自然科学基金(批准号:2010JQ8008)资助的课题~~

摘　　要：基于应变Si/SiGe器件结构,本文建立了统一的应变Si NMOSFET漏电流解析模型.该模型采用平滑函数,实现了应变Si NMOSFET漏电流及其导数,从亚阈值区到强反型区以及从线性区到饱和区的平滑性,解决了模型的连续性问题.同时考虑了载流子速度饱和效应和沟道长度调制效应的影响,进一步提高了模型精度.通过将模型的仿真结果和实验结果对比分析,验证了所建模型的有效性.该模型可为应变Si数字集成电路和模拟集成电路分析、设计提供重要参考.Based on the structure of strained Si/SiGe NMOSFET, a unified drain current model is presented in this paper. The model describes current characteristics from subthreshold to strong inversion as well as from the linear to the saturation operating regions with a smoothing function, and guarantees the continuities of the drain current and its derivatives.Furthermore, the model accuracy is enhanced by including carrier velocity saturation and channel length modulation effects. Comparisons between the model and the measured data show that the drain current model can describe the device characteristics well. The proposed model is useful for the design and simulation of digital and analogy circuits made of strained Si.

关 键 词：应变SI NMOSFET 漏电流 解析模型 

分 类 号：TN386[电子电信—物理电子学]