一种基于SiGe HBT的宽动态范围可变增益放大器  

A Variable Gain Amplifier with Wide Dynamic Range Based on SiGe HBT

作　　者：张卿远[1] 张万荣 邢光辉[1] 高栋[1] 周孟龙[1] 邵翔鹏[1] 鲁东[1] 霍文娟[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《微电子学》2013年第6期773-776,共4页Microelectronics

基　　金：国家自然科学基金资助项目(60776051;61006044;61006059);北京市自然科学基金资助项目(4082007);北京市教委科技发展计划资助项目(KM200710005015;KM200910005001);北京市人才强教深化计划-服务北京创新人才培养项目(0020005412A001);北京市优秀跨世纪人才基金资助项目(67002013200301)

摘　　要：基于Jazz 0.35μm SiGe HBT工艺,设计了一种宽动态范围的可变增益放大器(VGA)。放大器由三级级联结构构成,分别为输入级、增益控制级和输出级。采用新提出的增益控制结构,实现了较宽的增益动态范围。采用安捷伦的ADS仿真工具,对设计的电路进行仿真验证。结果表明,当控制电压从1.5V到3.0V变化时,VGA的增益在-39～30dB范围内连续变化,S11和S22在整个电压变化范围内均小于-11dB,3dB带宽超过600MHz;最大增益时,噪声系数小于5dB。A wide dynamic range variable gain amplifier （VGA） was designed based on Jazz＇s 0. 35 μm SiGe HBT process. The VGA was composed of 3 cascaded stages： input, gain control and output stages. For gain control stage, a novel gain control technology was adopted to achieve wide dynamic range. The circuit was simulated with Agilent＇s ADS design kit. Results showed that the VGA had a continuous variation of gain in a wide dynamic range from -39 dB to 30 dB when control voltage changed from 1.5 V to 3. 0 V, and it also achieved an Su and S2z less than -11 dB in the whole controlled voltage range, a 3-dB bandwidth over 600 MHz, and a noise figure （NF） below 5 dB for maximum gain.

关 键 词：可变增益放大器 锗硅 异质结双极晶体管 

分 类 号：TN721.1[电子电信—电路与系统]