GaAs MMIC的热生成机制的建模与仿真方法  

GaAs MMIC Heat Generation Mechanism and Thermal Modeling for Junction Temperatures

作　　者：赵磊[1,2,3] 何小琦[2,3] 来萍[2,3] 周斌[2,3] 恩云飞[2,3] 

机构地区：[1]广东工业大学材料与能源学院,广东广州510075 [2]工业和信息化部电子第五研究所,广东广州510610 [3]电子元器件可靠性物理及其应用技术重点实验室,广东广州510610

出　　处：《电子产品可靠性与环境试验》2013年第6期36-40,共5页Electronic Product Reliability and Environmental Testing

摘　　要：以GaAs基异质结双极性晶体管(HBT)单片微波集成电路(MMIC)为例,研究了器件内部的热生成机制,包括:确定器件内部的热生成机制及热生成区的位置,讨论器件内部热传导和热耗散的形式,建立器件的详细3 D实体模型。利用有限元软件ANSYS WorkBench,对已确定的热生成区进行热功耗加载,以便更加精确地模拟器件的峰值结温。Taking GaAs-based HBT MMIC as an example, the mechanism of heat generated inside the device is investigated. The mechanism and site of the heat generated inside the device is defined. The thermal conductivity and heat dissipation are discussed, A detailed 3D module is developed, by which the heat-power is loaded on the defined heat generated region using the finite element software ANSYS WorkBench, so that to obtain the more accurately simulated peak junction temperature.

关 键 词：热生成区 峰值结温 有限元仿真 单片微波集成电路 异质结双极性晶体管 

分 类 号：TN322.8[电子电信—物理电子学]