碳化硅肖特基结的研制  

作　　者：陈守迎 张聪[1] 汤德勇 

机构地区：[1]济南市半导体元件实验所

出　　处：《科技致富向导》2014年第3期154-155,共2页Guide of Sci-tech Magazine

摘　　要：近年来,Si器件的设计和制造工艺取得巨大进步,使Si器件特性已经接近材料理想极限。SiC材料的禁带宽度大、热导率高、临界电场高,SiC器件的高压、高温和抗辐射能力都远高于Si器件。本论文采用了Si器件的各种制成工艺技术,包括保护环、结终端扩展和台面结构,选用镍（Ni）与4H-SiC接触形成肖特基势垒,SiC肖特基二极管的基本结构与Si肖特基二极管相同,实验取得成功。In recent years, great progress has been made in the Si devices design and manufacturing technology,so that the Si devices characteristics have been close to the material ideal limit.SiC material has wide band gap,high thermal conductivity,high critical electric field, the breakdown voltage,operating temperature and resistance to radiation of SiC devices is much higher than that of Si devices.In this paper,using a variety of terminal technology of Si devices,including the protection ring,junction terminal expansion and the mesa structure,selection of nickel（Ni）and4H-SiC contact to form a schottky barrier is OK,the basic structure of the SiC schottky diode is same to Si schottky diode.The experiment was a success.

关 键 词：禁带 热导率 器件 SIC 肖特基二极管 

分 类 号：TN386.3[电子电信—物理电子学]