集成电路铜互连线及相关问题的研究  

Copper interconnections for IC and studies on related problems

作　　者：宋登元[1] 宗晓萍[1] 孙荣霞[1] 王永青[1] 

机构地区：[1]河北大学电子信息工程学院,河北保定071002

出　　处：《半导体技术》2001年第2期29-32,共4页Semiconductor Technology

摘　　要：论述了Ｃｕ作为互连金属的优点、面临的主要问题及解决方案，介绍了制备Ｃｕ互连线的双镶嵌工艺及相关工艺问题，讨论了Ｃｕ阻挡层材料的作用及选取原则，对低κ材料的研究的进展情况也进行了简要的介绍。The advantages, challenges, and process solutions for copper to replace aluminum as interconnect metal are presented. The fabrication flow of Cu patterning by the dual-damascene process and related key technologies are described. Cu barrier materials and rules in which the barriers are chosen are discussed.The current status of low-k dielectrics used in interconnect system are also given briefly.

关 键 词：集成电路 铜互连线 阻挡层 低K电介质 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]