GSMBE生长 1 .8- 2 .0μm波段In Ga As/ In Ga As P应变量子阱激光器  

GSMBE- Grown1.8— 2 .0 Micron Waveband In Ga As/ In Ga As P Strained Quantum Well Lasers

作　　者：柏劲松[1] 方祖捷[1] 张云妹 张位在[1] 陈高庭[1] 李爱珍[2] 陈建新[2] 

机构地区：[1]中国科学院上海光学与精密机械研究所,上海201800 [2]中国科学院上海冶金研究所信息功能材料国家重点实验室,上海200050

出　　处：《Journal of Semiconductors》2001年第1期40-46,共7页半导体学报（英文版）

基　　金：中国科学院"九五"基础性研究重大项目资助 !( KJ95 1-81-70 6 -0 6)&&

摘　　要：报道了气态分子束外延 ( GSMBE)生长 1.8— 2 .0μm波段 In Ga As/ In Ga As P应变量子阱激光器的研究结果 .1.8μm波段采用平面电极条形结构 ,已制备成功 10μm和 80μm条宽器件 ,器件腔长 5 0 0μm,室温下光致发光中心波长约为 1.82μm,在 77K温度下以脉冲方式激射 ,阈值电流分别约为 2 5 0 m A和 6 0 0 m A ,中心波长分别在 1.6 9μm和 1.73μm附近 .2 .0μm波段 ,制备成功 8μm宽脊波导结构器件 ,器件腔长 5 0 0μm,室温光致发光中心波长约为1.98μm ,77K温度下以脉冲方式激射 ,阈值电流约为 2 0 m A ,中心波长约为 1.89μm。GSMBE ( Gaseous Source Molecular Beam Epitaxy) grown 1.8— 2 .0μm waveband In Ga As/ In Ga As P/ In P strained quantum well lasers are reported.At 1.8μm's wavelength,the lasers with 10μm and 80μm wide planar electrical stripe struc- tures are fabricated,which are observed with pulsed electrical lum inescence at room temperature,and the estimated peak wavelengths is about 1.80μm .At 77K,the 10μm and 80μm- wide- stripe lasers becom e lasing in the pulsed regime,with the threshold currents being about 2 5 0 m A and 6 0 0 m A;the center wavelengths of 1.6 9μm and 1.73μm ,respectively.The 80μm- wide- stripe lasers can be found with the multiple- longitudinal- mode operation,while the 10μm ones with the two or three- lon- gitudinal- mode operation.At 2 .0μm 's wavelength,the lasers with 8μm - wide ridgewaveguide structures are fabricated.At room temperature the pulsed electrical luminescence spectrum is observed with the peak wavelength about 1.98μm .At 77K,the lasers become lasing in the pulsed regime,with the threshold currentabout2 0 m A ,center wavelength 1.89μm and the single- longitudinal- m ode operation in the current range of 16 0— 2 30 m A.

关 键 词：GSMBE生长 中红外波段 应变量子阱激光器 INGAAS/INGAASP 砷化镓 

分 类 号：TN248.4[电子电信—物理电子学]