锑基二类超晶格中波红外焦平面探测器技术  

Research on Sb-based type-Ⅱ superlattice MW infrared focus plane array

作　　者：巩锋[1] 马文全[2] 谭振[1] 刘铭[1] 王亮[1] 张燕华[2] 邢伟荣[1] 

机构地区：[1]华北光电技术研究所,北京100015 [2]中国科学院半导体研究所,北京100083

出　　处：《激光与红外》2014年第3期258-260,共3页Laser & Infrared

摘　　要：InAs/GaSbⅡ类超晶格以其特有的量子效率高、暗电流小、能带结构可调等材料性能和器件优势,成为第三代红外探测器技术的最佳选择之一。本文报道了中波InAs/GaSbⅡ类超晶格材料的设计、生长、器件工艺技术,制备出了高性能的128×128中波InAs/GaSbⅡ类超晶格红外焦平面探测器,像元暗电流密度降到1.8×10-7A/cm2,量子效率达36.64%。Owing to the excellent material performance and device advantage of InAs/GaSb Type-II superlattice such as high quantum efficiency, low dark current and adjustable energy, band structure, it has been one of the best choice for the third-generation infrared focal plane arrays detector. Material design, material growth and device technology, of MW InAs/GaSb Type-II superlattice are reported. High performance 128 × 128 MW focal plane arrays were fabrica- ted. Dark current density is 1.8 × 10^- 7 A/cm2 and quantum efficiency reaches 36.64%.

关 键 词：INAS GASB II类超晶格 128×128 像元暗电流密度 量子效率 

分 类 号：TN214[电子电信—物理电子学]