基于锎源的N沟道VDMOS器件单粒子效应研究  

Study on Single Event Effect of N-Channel VDMOS Based on Cf Source

作　　者：陈佳[1] 乔哲[1] 唐昭焕[2] 王斌[1] 谭开洲[2] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]模拟集成电路重点实验室,重庆400060

出　　处：《微电子学》2014年第1期105-109,共5页Microelectronics

摘　　要：分析了N沟道VDMOS器件的单粒子辐射损伤机理和损伤模式,讨论了VDMOS器件的单粒子辐射加固措施。使用锎源,对采取了加固措施的一款200V高压N沟道VDMOS器件进行单粒子效应试验研究。对比分析了不同漏源电压和栅源电压以及不同真空度对VDMOS单粒子效应的影响,可为VDMOS器件的单粒子辐射加固、试验验证及应用提供参考。Single-event-effect （SEE） damage mechanism and damage mode of n-channel VDMOS were analyzed, and radiation-hardening techniques for VDMOS device were discussed. A 200 V n-channel VDMOS hardened with the proposed radiation-hardening technique was irradiated with Cf source to study single-event-effect of VDMOS devices. For the same device, SEE of VDMOS at different drain-source and gate-source voltages and different vacuum levels was analyzed. This work may serve as a reference for designing SEE hardened VDMOS device, as well as its experimentation and application.

关 键 词：VDMOS 单粒子效应 锎源 单粒子烧毁 单粒子栅穿 

分 类 号：TN432[电子电信—微电子学与固体电子学]