低温SiGe/Si HBT的研制及性能分析  

Fabrication and Characterization of SiGe/Si HBT Operating at Low Temperature

作　　者：徐晨[1] 沈光地[1] 邹德恕[1] 陈建新[1] 邓军[1] 魏欢[1] 杜金玉[1] 高国[1] 

机构地区：[1]北京工业大学电子工程系和北京市光电子技术实验室,北京100022

出　　处：《电子学报》2001年第2期285-286,274,共3页Acta Electronica Sinica

基　　金：国家"863"计划! (No .863 30 7 1 5 4(0 6) ) ;国家973项目! (No .G2 0 0 0 0 683 0 2 );国家自然科学基金! (No .698760 0 4 )

摘　　要：用MBE(分子束外延 ,MolecularBeamEpitaxy)生长的材料研制了在低温工作的SiGe/SiHBT(异质结双极型晶体管 ,HeterojunctionBipolarTransistor) .其在液氮下的直流增益hfe(Ic/Ib)为 16 0 0 0 ,交流增益 β(ΔIc/ΔIb)为 2 6 0 0 0 ,分别比室温增益提高 5 1和 73倍 .测试了该HBT直流特性从室温到液氮范围内随温度的变化 ,并作了分析讨论 .The SiGe/Si HBTs operating at low temperature were fabricated. The current gain hfe (Ic/Ib) over 16000 and β (δIc/δIb) over 26000 are observed at 77 K, exceeding those at 290 K by about 51 and 73 times, respectively. The temperature dependence of DC characteristics of the HBT between 290 K and 77 K was described and analyzed. The departure from theoretical expectation of this dependence at very low temperature was discussed.

关 键 词：SIGE/SI HBT 分子束外延 异质结双极晶体管 低温电子学 

分 类 号：TN322.8[电子电信—物理电子学]