高k栅介质GeOI金属氧化物半导体场效应管阈值电压和亚阈斜率模型及其器件结构设计  

Models on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET

作　　者：范敏敏[1] 徐静平[1] 刘璐[1] 白玉蓉[1] 黄勇[1] 

机构地区：[1]华中科技大学光学与电子信息学院,武汉430074

出　　处：《物理学报》2014年第8期385-393,共9页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61274112)资助的课题~~

摘　　要：通过求解沟道与埋氧层的二维泊松方程,同时考虑垂直沟道与埋氧层方向的二阶效应,建立了高κ栅介质GeOI金属氧化物半导体场效应管(MOSFET)的阈值电压和亚阈斜率解析模型,研究了器件主要结构参数对器件阈值特性、亚阈特性、短沟道效应、漏极感应势垒降低效应及衬偏效应的影响,提出了优化器件性能的结构参数设计原则及取值范围,模拟结果与TCAD仿真结果符合较好,证实了模型的正确性与实用性。An analytical model on threshold voltage and subthreshold swing for high-k gate dielectric GeOI MOSFET （metal-oxide-semiconductor field-effect transistor） is established by considering the two-dimensional effects in both channel and buried-oxide layers and solving two-dimensional Poisson’s equation. The influences of the main structural parameters of the device on threshold voltage and subthreshold swing, and the short-channel effects, drain induction barrier lower effect and substrate-biased effect are investigated using the model, and the design principles and value range of the structural parameters are presented to optimize the electrical performances of the device. The simulated results are in good agreement with the TCAD simulated data, confirming the validity of the model.

关 键 词：GEOI MOSFET 阈值电压 亚阈斜率 短沟道效应 

分 类 号：TN386[电子电信—物理电子学]