云南高校图书馆联盟文献共享服务平台- GEOI

GEOI: 作品数：10被引量：6H指数：2; 导出分析报告; 相关作者：郝跃戴显英张鹤鸣许军王敬更多>>; 相关机构：西安电子科技大学华中科技大学清华大学中国科学院大学更多>>; 相关期刊：《物理学报》《半导体技术》《Chinese Physics B》《Journal of Semiconductors》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划上海市浦江人才计划项目更多>>

ETH-GQS: An estimation of geoid-to-quasigeoid separation over Ethiopia: 《Geodesy and Geodynamics》2022年第1期31-37,共7页Ephrem Y.Belay Walyeldeen Godah Malgorzata Szelachowska Robert Tenzer; conducted in the framework of the statutory project “Problems of Geodesy and Geodynamics” of the Institute of Geodesy and Cartography (IGiK), Warsaw, financially supported by the Polish Ministry of Science and Higher Education;supported by the Hong Kong GRF RGC project 15218819: “The modernization of height datum in the Hong Kong territories”; The determination of accurate orthometric or normal heights remains one of the main challenges for the geodetic community in Ethiopia.These heights are required for geodetic and geodynamic scientific research as well ...; 关键词：Geoid-to-quasigeoid separation GNSS-Levelling Ethiopian vertical control network Orthometric and normal heights Airborne gravity data

Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance被引量：1: 《Chinese Physics B》2020年第10期473-478,共6页Bin Wang Sheng Hu Yue Feng Peng Li Hui-Yong Hu Bin Shu; Project supported by the National Natural Science Foundation of China(Grant No.61704130);the Science Research Plan in Shaanxi Province,China(Grant No.2018JQ6064);the Science and Technology Project on Analog Integrated Circuit Laboratory,China(Grant No.JCKY2019210C029).; Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect transistor (TFET). In this paper, a novel TFET with gate-controlled P+N+N+ structure based on partially ...; 关键词：Ge-based TFET two line tunneling paths point tunneling on-state current density

硅锗界面热应力的控制及晶圆级GeOI的制备: 《半导体技术》2018年第9期689-696,共8页张润春黄凯林家杰鄢有泉伊艾伦周民游天桂欧欣; 上海市浦江人才计划资助项目(17PJ1410500); 智能剥离技术是制备绝缘体上锗（GeOI）衬底的常用方法。然而,由于锗与硅之间的热膨胀系数相差较大,硅锗键合界面较大的热应力可能导致键合对裂片或者解键合。通过对硅锗异质键合对的热应力问题进行理论分析,建立了硅锗双平板热应力模...; 关键词：绝缘体上锗(GeOI) 异质集成智能剥离晶圆键合热应力

A physical model of hole mobility for germanium-on-insulator pMOSFETs被引量：1: 《Journal of Semiconductors》2016年第4期50-56,共7页袁文宇徐静平刘璐黄勇程智翔; Project supported by the National Natural Science Foundation of China(Nos.61274112,61176100,61404055); A physical model of hole mobility for germanium-on-insulator p MOSFETs is built by analyzing all kinds of scattering mechanisms, and a good agreement of the simulated results with the experimental data is achieved, co...; 关键词：GeOI pMOSFETs hole mobility scattering mechanisms

Smart-cut方法制备GeOI材料的Ge表面腐蚀研究: 《电子科技》2015年第6期205-207,212,共4页邓海量杨帆张轩雄; 通过H离子注入Ge晶圆退火起泡动力学研究,对实现晶圆Ge在氧化硅上层转移后的Ge表面(Ge OI)采用湿法化学腐蚀研究,使其能进一步改善表面质量(即粗糙度),同时去除由于H离子注入Ge所造成的表面非晶层。通过氨水、H2O2、去离子水混合溶液在...; 关键词：Smart-cut技术 Ge表面粗糙度表面腐蚀

Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor: 《Chinese Physics B》2015年第3期327-331,共5页范敏敏徐静平刘璐白玉蓉黄勇; supported by the National Natural Science Foundation of China(Grant No.61274112); Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models i...; 关键词：GeOI metal-oxide-semiconductor field-effect transistor fringing capacitance subthreshold swing threshold voltage

Simulation of electrical characteristics and structural optimization for small-scaled dual-gate GeOI MOSFET with high-k gate dielectric被引量：2: 《Journal of Semiconductors》2014年第9期39-44,共6页白玉蓉徐静平刘璐范敏敏; Project supported by the National Natural Science Foundation of China(No.61274112); The influences of the main structure and physical parameters of the dual-gate GeOl MOSFET on the device performance are investigated by using a TCAD 2D device simulator. A reasonable value range of germanium （Ge） ch...; 关键词：GeOI MOSFET high-k gate dielectric short-channel effect drain-induced barrier lowering effect

高k栅介质GeOI金属氧化物半导体场效应管阈值电压和亚阈斜率模型及其器件结构设计: 《物理学报》2014年第8期385-393,共9页范敏敏徐静平刘璐白玉蓉黄勇; 国家自然科学基金(批准号:61274112)资助的课题~~; 通过求解沟道与埋氧层的二维泊松方程,同时考虑垂直沟道与埋氧层方向的二阶效应,建立了高κ栅介质GeOI金属氧化物半导体场效应管(MOSFET)的阈值电压和亚阈斜率解析模型,研究了器件主要结构参数对器件阈值特性、亚阈特性、短沟道效应、...; 关键词：GEOI MOSFET 阈值电压亚阈斜率短沟道效应

The impact of quantum confinement on the electrical characteristics of ultrathinchannel GeOI MOSFETs: 《Journal of Semiconductors》2014年第4期62-67,共6页范敏敏徐静平刘璐白玉蓉; supported by the National Natural Science Foundation of China(No.61274112); The impact of quantum confinement on the electrical characteristics of ultrathin-channel GeO1 n- MOSFETs is investigated on the basis of the density-gradient model in TCAD software. The effects of the channel thickne...; 关键词：GeOl MOSFET quantum confinement subthreshold slope threshold voltage

循环氧化／退火制备GeOI薄膜材料及其性质研究被引量：2: 《物理学报》2011年第7期779-783,共5页胡美娇李成徐剑芳赖虹凯陈松岩; 国家重点基础研究发展计划(批准号:2007CB613404);国家自然科学基金(批准号:61036003和60837001)资助的课题~~; 采用超高真空化学气相淀积系统在SOI(绝缘体上硅)衬底上生长了Si0.82Ge0.18外延层,通过循环氧化/退火工艺,制备出Ge组分从0.24到1的绝缘体上锗硅(SGOI)材料.采用高分辨透射电镜、拉曼散射光谱和光致发光谱表征了其结构及光学性质,对氧...; 关键词：GEOI 氧化退火光致发光谱

GEOI