微电子器件抗辐射加固技术发展研究  

Investigation into Development of Radiation Hardening Technology for Microelectronic Devices

作　　者：王健安[1] 谢家志[1] 赖凡[1] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2014年第2期225-228,236,共5页Microelectronics

摘　　要：对微电子器件抗辐射加固的发展态势进行了分析研究。目前,对微电子器件进行抗辐射加固的主要技术是抗辐射加固设计和抗辐射加固工艺;微电子技术的进步促进了抗辐射加固的新设计技术、新工艺技术、封装技术和试验手段不断发展,刺激了完整有效的设计、验证体系和制造能力的形成;领先国家的技术发展重点在于加强设计、工艺、制造领域的抗辐射加固能力,提升微电子器件的抗辐射加固指标、容错能力和高可靠性品质。研究结果对建立完整的抗辐射加固体系,加速抗辐射加固技术发展具有一定的参考价值。An investigation was made into development of technologies for radiation hardening of microelectronic devices.Currently,radiation hardening of microelectronic devices was focused on design and process.With the advancement of microelectronics technology,new techniques for design,process,packaging and test are emerging, which helped to form effective design and evaluation system and manufacturing capability.The leading countries stress strongly on strengthening radiation hardening capability of design,process and fabrication,and enhancing radiation hardness level,fault tolerant and reliability quality of microelectronic devices.Therefore,it is significant and helpful to establish a complete radhard system to promote development of radiation hardening technology.

关 键 词：微电子器件 抗辐射加固 SOI SIGE 

分 类 号：TN406[电子电信—微电子学与固体电子学]