SiC衬底上生长的GaN外延层的高分辨X射线衍射分析  

High Resolution X-ray Diffraction Analysis of GaN Epitaxial Layer Grown on SiC Substrate

作　　者：于国建[1] 徐明升[1,2] 胡小波[1] 徐现刚[1,2] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100 [2]山东浪潮华光光电子股份有限公司,济南250100

出　　处：《人工晶体学报》2014年第5期1017-1022,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(11134006;51321091);山东大学自主创新项目(2012ZD047);国家高技术研究发展计划(863计划)(2011AA050401)

摘　　要：通过高分辨X射线衍射(HRXRD)技术,对金属有机化合物气相外延(MOCVD)生长的GaN外延膜及SiC衬底的相对取向,晶格常数和应力情况,位错密度等进行了分析。分析表明,GaN和SiC具有一致的a轴取向,GaN外延层弛豫度超过90%,GaN外延层的晶格常数与体块材料相近,在GaN中存在压应力,SiC衬底和GaN外延层中的位错密度分别为107和108量级。The GaN epitaxial layer grown on SiC substrate by metal-organic chemical vapor dispersion was analyzed by the high resolution X-ray diffraction （HRXRD）. The orientation of the GaN relative to the SiC, the lattice parameters, the stress and the dislocation density were detected. The analysis results indicate that the a-axis direction of GaN is parallel to that of SiC. The relaxation degrade of the GaN epitaxial layer exceeds 90% and the lattice parameters of GaN epitaxial layes are almost the same as those of bulk GaN material. The GaN layer is compressive stressed. The dislocation densities in SiC and GaN are 10^7 and 10^8 respectively.

关 键 词：高分辨X射线衍射 SIC衬底 GAN外延层 

分 类 号：O484.4[理学—固体物理]