Co－Si界面低温（≤450℃）相变的电子显微术研究  

Transmission Electron Microscopy Study of Co/Si Interface below 450℃

作　　者：张灶利[1] 肖治纲[1] 杜国维[1] 

机构地区：[1]北京科技大学材料物理系

出　　处：《Journal of Semiconductors》1995年第3期195-200,共6页半导体学报（英文版）

摘　　要：本文用透射电镜的衍射方法，研究Ｃｏ薄膜和衬底之间的界面的低温相变．用小角解理方法制备的室温原始样品经分析发现：室温下薄膜没有相变．在２５０℃，Ｃｏ２Ｓｉ为最先形成的硅化物；２５０℃３０分钟处理后，产生大量的ＣｏＳｉ相．４５０℃１小时处理形成单相的ＣｏＳｉ．从本实验结果与前人研究结果对比发现：观察手段、样品制备方法、镀膜方法等因素会影响低温相变结果．Abstract The reaction between Co film and Si substrate below 450℃ at Co/Si interface has been studied by using diffraction. The as - grown samples were prepared by smalL angle cleavage. The results show no reaction was revealed at room temperature. However, Co2Si was the first phase formed at 250℃ for 30 minutes annealing period. After one hour annealing at 450℃, only CoSi phase can be observed. Comparing with previous results, it has been found out that the deposition technique, the specimen preparation and the method of analysis of the films have important effect on the low-temperature reaction at Co/Si interface.

关 键 词：硅化物薄膜 相变 电子显微术 Co-Si界面 低温 

分 类 号：TN304.205[电子电信—物理电子学]