Si(100)衬底上SiC的外延生长  

EPITAXIAL GROWTH OF SiC ON Si(100) SUBSTRATE

作　　者：王引书[1] 李晋闽[1] 张方方[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所,北京市100083

出　　处：《材料研究学报》2000年第B01期91-93,共3页Chinese Journal of Materials Research

摘　　要：在 １０５０ ℃下用 Ｓｉ２Ｈ６和 Ｃ２Ｈ４在 Ｓｉ（１００）衬底上外延生长了 ３Ｃ－ＳｉＣ，生长前只通入Ｃ２Ｈ４将 Ｓｉ衬底碳化形成 ＳｉＣ缓冲层碳化过程中 Ｃ２Ｈ４与 Ｓｉ表面反应形成了 ＳｉＣ孪晶，但随着生长时间的延长，外延层转变为单晶层，其表面呈现典型的单晶 ＳｉＣ的（２×１）再构从外延层的 Ｒａｍａｎ谱观察到明显的ＳｉＣ的ＴＯ和ＬＯ声子模；ＳＥＭ观测结果表明。3C-Sic was grown on Si(100) substrate at 1050 with simultaneous supply of Si2H6 and C2H4. A buffer layer of sic was performed by carbonized the Si substrate with C2H4 supply only. SiC twins formed during the carbonization. With the increasing of the growth time, the twins vanished and single crystal SiC with (2×1) superstructure formed. Obvious SiC LO and TO phonon modes were observed in the epilayer. The epilayer observed with SEM was smooth.

关 键 词：外延生长 表面再构 RAMAN光谱 单晶生长 单晶薄膜 碳化硅 硅衬底 

分 类 号：TN304.24[电子电信—物理电子学] TN304.054