用光致抗蚀剂膜层制作衰减相移掩模  

A New Method to Fabricate Attenuated Phase-shifting Mask with Photoresist Shifter

作　　者：侯德胜[1] 冯伯儒[1] 孙方[1] 张锦[1] 

机构地区：[1]中国科学院光电技术研究所微细加工光学技术国家重点实验室,成教610209

出　　处：《微细加工技术》2001年第2期6-8,34,共4页Microfabrication Technology

基　　金：中国科学院重点项目!(AK970 4 );微细加工光学技术国家重点实验室基金资助项目!(KFS990 2 )

摘　　要：提出一种用光致抗蚀剂膜层制作单层结构衰减相移掩模的新方法 ,介绍这种方法的原理和制作工艺 ,并给出这种方法制作的衰减相移掩模用于准分子激光光刻实验 ,得到显著提高光刻分辨力的实验结果。A new method of making attenuated phase-shifting mask with photoresist shifter is proposed.The principle and manufacturing process of the method are described.The fabricated masks with this method are used for exposure experiments with the system of KrF excimer laser projection photolithography.The exprimental results have proved that the attenuated phase-shifting masks with photoresist shifter are able to improve the resolution of the photolithography evidently.

关 键 词：光致抗蚀剂 衰减相移掩模 分辨力 光刻 

分 类 号：TN305.7[电子电信—物理电子学]