接近式光刻中斜照明改善分辨率的模拟与分析  

Simulation and Analysis of Resolution Enhancement in Proximity Lithography by Off-axis Illumination

作　　者：赵永凯[1] 黄惠杰[1] 路敦武[1] 杜龙龙[1] 杨良民[1] 袁才来[1] 蒋宝财[1] 王润文[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《微细加工技术》2001年第2期9-13,60,共6页Microfabrication Technology

基　　金：国家自然科学基金资助项目! (6 98780 2 9)

摘　　要：根据菲涅尔 基尔霍夫衍射公式 ,推导出斜照明接近式光刻系统中硅片表面的光强分布 ,并在几种条件下进行了模拟数值计算 ,分析了斜照技术的实用条件及改善光刻分辨率的效果和应用前景。Intensity distribution on the wafer plane in proximity printing system under off-axis illumination is derived based on the amplitude analytic expression for Fresnel-Kirchhoff diffraction.Numerical simulations have been done under various conditions.Resolution enhancement effect by off-axis illumination and its application are analyzed.

关 键 词：接近式光刻 准分子激光光刻 分辨率 斜照明 

分 类 号：TN305.7[电子电信—物理电子学]