InGaN光致发光性质与温度的关系  

Dependence of InGaN Photoluminescence on Temperature

作　　者：樊志军[1] 刘祥林[1] 万寿科[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所半导体材料开放实验室,北京100083

出　　处：《Journal of Semiconductors》2001年第5期569--57,共1页半导体学报（英文版）

基　　金：国家自然科学基金资助项目! (合同号 :6990 60 0 2 )&&

摘　　要：分析了用金属有机物气相外延方法 (MOVPE)在蓝宝石衬底上生长的铟镓氮 (In Ga N)的光致发光 (PL)性质 .发现在 4.7K至 30 0 K范围内 ,随着温度升高 ,In Ga N带边辐射向低能方向移动 ,峰值变化基本符合 Varshni经验公式 ;同时 In Ga N发光强度虽有所衰减 ,但比 Ga N衰减程度小 ,分析了导致 Ga N和 In Ga N光致发光减弱的可能因素 .The properties of photoluminescence (PL) of InGaN grown by metalorganic vapor phase epitaxy have been studied.It is found that the near-band-gap radiation wavelength shifts to the lower energy when the temperature increasing from 47K to 300K.The red-shift accords with the Varshni’s empirical equation on the whole.The temperature quenching has also been observed in the PL of InGaN,though it is much less than that of GaN.The possible reason that causes the quenching has been analyzed.

关 键 词：INGAN 变温 光致发光性质 铟镓氮 MOVPE法 

分 类 号：TN304.26[电子电信—物理电子学]