硅的横向刻蚀技术研究  

An Investigation into Lateral Etching of Silicon

作　　者：范忠[1] 赖宗声[1] 秦元菊[1] 孔庆粤[1] 

机构地区：[1]华东师范大学电子科学技术系,上海200062

出　　处：《微电子学》2001年第3期195-197,203,共4页Microelectronics

基　　金：国家自然科学基金 (6 9876 0 12 );高校博士点专项基金 (1998年度 )

摘　　要：研究了 SF6等离子体横向刻蚀硅的速率和对 Si O2 的选择性 ,主要通过改变 SF6气体流量和加入 O2 ,提高硅的横向刻蚀速率和对 Si O2 选择性。实验发现 ,加入 O2 能提高 SF6等离子对 Si的横向刻蚀速率和 Si/Si O2 的刻蚀速率比。Si的横向刻蚀速率最高可达 0 .45μm/min,Si/Si O2 的刻蚀比可达 50∶ 1。最后提出 ,在一定刻蚀条件下 ,可增加 Si O2 掩膜厚度 ,或用金属铝作掩膜来加大WT5”BZ]Etch rate of Si lateral etching and its selectivity to SiO 2 by SF 6 plasma etching are studied in this paper In order to accelerate the lateral etching of Si and improve the selectivity to SiO 2, the flow of SF 6 is adjused and the O 2 is added to SF 6 The experimental results show that the lateral etching of Si can be accelerated and the selectivity to SiO 2 can be improved by adding O 2 A maximum Si lateral etching rate of 0 45 μm/min and selectivity to SiO 2 of 50∶1 are achieved It is suggested that larger lateral etching can be made by increasing the thickness of SiO 2 mask,or using Al as mask instead of SiO 2, under certain etching conditions [WT5HZ]

关 键 词：MEMS 等离子刻蚀 横向刻蚀 硅 

分 类 号：TN305.7[电子电信—物理电子学]