超薄栅MOS结构恒压应力下的直接隧穿弛豫谱  

Direct Tunneling Relaxation Spectroscopy in Ultrathin Gate Oxide MOS Structures Under Constant Pressure Stress

作　　者：卫建林[1] 毛凌锋[1] 许铭真[1] 谭长华[1] 

机构地区：[1]北京大学微电子研究所,北京100871

出　　处：《Journal of Semiconductors》2001年第6期765-769,共5页半导体学报（英文版）

摘　　要：随着器件尺寸的迅速减小 ,直接隧穿电流将代替 FN电流而成为影响器件可靠性的主要因素 .根据比例差值算符理论和弛豫谱技术 ,针对直接隧穿应力下超薄栅 MOS结构提出了一种新的弛豫谱——恒压应力下的直接隧穿弛豫谱 (DTRS) .该弛豫谱保持了原有弛豫谱技术直接、快速和方便的优点 ,能够分离和表征超薄栅 MOS结构不同氧化层陷阱 ,提取氧化层陷阱的产生 /俘获截面、陷阱密度等陷阱参数 .直接隧穿弛豫谱主要用于研究直接隧穿注入的情况下超薄栅 MOS结构中陷阱的产生和复合 ,为超薄栅 MOS结构的可靠性研究提供了一强有力工具 .With the rapid scaling down of MOS devices,the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.Based on the method of proportional difference operator and relaxation spectroscopy technique,a new relaxation spectroscopy technique,Direct Tunneling Relaxation Spectroscopy (DTRS) is presented for the ultrathin gate oxide MOS structure under the direct tunneling stress,which has the same advantages of OCRS technique,direct,fast and convenient.It can separate and characterize different traps in an ultra-thin direct tunneling gate oxide,and extract the parameters of an oxide trap,such as the generation/capture cross section and density.It is a useful tool to study the mechanism of degradation in the ultra-thin MOSFET under direct tunneling stress.

关 键 词：直接隧穿 超薄栅氧化层 陷阱参数 可靠性 MOS器件 

分 类 号：TN386.1[电子电信—物理电子学]