深亚微米MOS器件的热载流子效应  

Hot-Carrier Effects in Deep Sub-Micron MOSFET's

作　　者：刘红侠[1] 郝跃[1] 孙志[1] 

机构地区：[1]西安电子科技大学微电子所,西安710071

出　　处：《Journal of Semiconductors》2001年第6期770-773,共4页半导体学报（英文版）

基　　金：国防科技电子预研资助项目! (No.G982 5 741)

摘　　要：对深亚微米器件中热载流子效应 (HCE)进行了研究 .还研究了沟道热载流子的产生和注入以及与器件工作在高栅压、中栅压和低栅压三种典型的偏置条件的关系 .在分析热载流子失效机理的基础上 ,讨论了热载流子效应对电路性能的影响 .提出影响晶体管热载流子效应的因素有 :晶体管的几何尺寸、开关频率、负载电容、输入速率及晶体管在电路中的位置 .通过对这些失效因素的研究并通过一定的再设计手段 ,可以减少热载流子效应导致的器件退化 .The hot carrier effects (HCE) in deep sub-micron devices has been studied.The relations between generation and injection of channel hot carriers and three kinds of main bias conditions:the high voltage,the medium voltage and the low voltage are investigated.The impact of hot-carrier effects on circuit performance is also discussed on the basis of mechanisms of hot carriers induced failure.It is presented that the factors that affect hot-carrier effects of transistors include:the size,frequency,load capacitors,input velocity and the positions of transistors.The device degradation induced by HCE can be reduced by studying these failure factors to resign the circuits.

关 键 词：深亚微米 MOS器件 热载流子效应 可靠性 

分 类 号：TN386.1[电子电信—物理电子学]