SiGe HBT基区渡越时间模型  

A model of the base transit time of SiGe HBT

作　　者：林大松[1] 张鹤鸣[1] 戴显英[1] 孙建诚[1] 何林[2] 

机构地区：[1]西安电子科技大学微电子所,陕西西安710071 [2]模拟集成电路国家重点实验室,重庆400060

出　　处：《西安电子科技大学学报》2001年第4期456-461,共6页Journal of Xidian University

基　　金：模拟集成电路国家重点实验室基金资助项目 ( 99JS0 9 1 1 DG10 4)

摘　　要：建立了SiGeHBT基区渡越时间模型 .该模型考虑了电流密度及基区掺杂和Ge组分所引起的各种物理效应 ,适用于基区掺杂和Ge组分为均匀和非均匀分布 ,以及器件在小电流到大电流密度下的应用 .模拟结果表明 ,基区集电结边界处载流子浓度引起的基区附加延时对基区渡越时间有较大的影响 .A model for the base transit time of SiGe HBTs is dveloped. Various physical effects caused by doping and Ge fraction in base and current density are considered in this model. This model is suitable for uniform and exponential base doping with different Ge profiles in the base (e.g., box, trapezoidal, triangular), and different current densities including that causing the Kirk effect. The simulation results show that the carrier concentration on the base side of base-collector space charge region has a significant effect on the base transit time, and the trapezoidal Ge profile has the least base transit time for different base dopings. The model shows a good agreement with the published data.

关 键 词：异质结双极晶体管 锗化硅 HBT 基区渡越时间模型 

分 类 号：TN322.8[电子电信—物理电子学]