单片Si-FED的结构和设计  

Structure and design of a monolithic Si-FED

作　　者：范忠[1] 李琼[1] 徐静芳[1] 茅东升[2] 

机构地区：[1]华东师范大学电子科学技术系,上海200062 [2]中科院上海冶金所离子束开放实验室,上海200050

出　　处：《半导体技术》2001年第5期50-54,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目!(69671011)

摘　　要：根据场发射显示器（ＦＥＤ）的工作原理和所要求的电学参数，利用常规的硅半导体工艺和微机械加工技术，设计和试制了显示面积为１０．８ｍｍ×１０．８ｍｍ的研究性器件。版图设计中采用了离子注入法形成导电网络结构和横向负反馈电阻。工艺流程采用了全干法两步刻蚀和热氧化增尖形成理想硅微尖锥的方案。硅场发射冷阴极阵列（Ｓｉ－ＦＥＣＡ）是ＦＥＤ的核心。An experimental monolithic Si-field emitter display (Si-FED), with effective area 10. 8mm x 10.8mm was designed according to its operational principles and required electrical parameters, and fabricated by conventional IC process and micromaching techniques. Ion implantation was used to form conductive mesh and lateral series resistive layer. Two-step dry etching and thermal oxidation were used to fabricate the ideal micro cones. Si- field emission cathode arrays (Si-FECA) is the key element of FED.

关 键 词：场发射显示器 干法刻蚀 离子注入 硅 

分 类 号：TN873[电子电信—信息与通信工程]