6H-SiC高压肖特基势垒二极管  

6H-SiC High-Voltage Schottky Ba rrier Diodes

作　　者：王姝睿[1] 刘忠立[1] 徐萍[1] 葛永才[1] 姚文卿[1] 高翠华[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2001年第8期1052-1056,共5页半导体学报（英文版）

摘　　要：在可商业获得的 N型 6 H - Si C晶片上 ,通过化学气相淀积 ,进行同质外延生长 ,在此结构材料上 ,通过热蒸发 ,制作 Ni/6 H- Si C肖特基势垒二极管 .测量并分析了肖特基二极管的电学特性 ,结果表明 ,肖特基二极管具有较好的整流特性 :反向击穿电压约为 45 0 V,室温下 ,反向电压 VR=- 2 0 0 V时 ,反向漏电流 JL=5× 10 - 4 A· cm- 2 ;理想因子为 1.0 9,肖特基势垒高度为 1.2 4— 1.2 6 e V ,开启电压约为 0 .The fabrication and electrical characterization of Scho tt ky barrier diodes (SBD) on 6H-SiC,via thermal evaporation of Ni are reported.Th e Schottky barrier diodes are fabricated during the 6H-SiC epilayers grow n by using chemical vapor deposition on commercially available single-crystal 6 H-SiC wafers.The I-V characteristics of these diodes exhibit a sharp break down,with the breakdown voltage of 450V at room temperature.The diodes are demon strated to be of a low reverse leakage current of 5×10 -4 A·cm -2 at the bias voltage of -200V.The ideal factor and barrier height are 1 09 and 1 24-1 26eV,respectively.

关 键 词：碳化硅 肖特基势垒二极管 6H-SIC 

分 类 号：TN311.7[电子电信—物理电子学]